參數(shù)資料
型號： 2SJ604
廠商： NEC Corp.
英文描述： MOS FIELD EFFECT TRANSISTOR
中文描述： MOS場效應(yīng)管
文件頁數(shù)： 4/8頁
文件大?。?/td> 80K
代理商： 2SJ604
Data Sheet D14649EJ3V0DS
4
2SJ604
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
–
4
–
1
–
2
–
3
–
5
V
=
–
10 V
–
100
–
10
–
1
–
1000
–
0.1
T
A
=
55
C
25
C
75
C
125
C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
–
2
–
3
–
4
–
120
–
100
–
80
–
60
–
40
–
20
0
–
1
Pulsed
–
5
–
4.0 V
–
4.5 V
V
GS
=
–
10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
–
0.01
–
0.1
–
1
10
100
–
10
–
100
0.1
1
Pulsed
V
DS
=
–
10 V
0.01
T
= 125
C
75
C
25
C
55
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
V
GS
- Gate to Source Voltage - V
R
D
0
–
5
–
10
–
15
–
20
Pulsed
60
40
20
0
I
D
=
–
45 A
–
23 A
–
9 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
–
10
–
1
80
60
40
20
0
–
100
–
1000
Pulsed
V
GS
=
–
4.0 V
–
4.5 V
–
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
=
–
10 V
I
D
=
–
1 mA
–
1.0
–
2.0
–
3.0
–
50
0
50
100
0
150
–
4.0
相關(guān)PDF資料
PDF描述
2SJ604-S MOS FIELD EFFECT TRANSISTOR
2SJ604-Z MOS FIELD EFFECT TRANSISTOR
2SJ604-ZJ MOS FIELD EFFECT TRANSISTOR
2SJ605 MOS FIELD EFFECT TRANSISTOR
2SJ605-S MOS FIELD EFFECT TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ604-AZ 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220AB Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,60V,45A,23m ohm,TO-220AB 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(3+Tab) TO-220AB
2SJ604-S 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ604-Z 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SJ604-Z-AZ 制造商:Renesas Electronics 功能描述:Pch -60V -45A 30m@10V TO220SMD Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 45A 3-Pin(2+Tab) TO-220 SMD
2SJ604-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
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