參數資料
型號: 2SJ555-E
元件分類: JFETs
英文描述: 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數: 2/8頁
文件大?。?/td> 90K
代理商: 2SJ555-E
2SJ555
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–60
A
Drain peak current
ID (pulse)
Note 1
–240
A
Body to drain diode reverse drain current
IDR
–60
A
Avalanche current
IAP
Note 3
–60
A
Avalanche energy
EAR
Note 3
308
mJ
Channel dissipation
Pch
Note 2
125
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg ≥ 50
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–60
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
–10
A
VDS = –60 V, VGS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–1.0
–2.0
V
ID = –1 mA, VDS = –10 V
RDS (on)
0.017
0.022
ID = –30 A, VGS = –10 V
Note 4
Static drain to source on state resistance
RDS (on)
0.024
0.036
ID = –30 A, VGS = –4 V
Note 4
Forward transfer admittance
|yfs|
27
45
S
ID = –30 A, VDS = –10 V
Note 4
Input capacitance
Ciss
4100
pF
Output capacitance
Coss
2100
pF
Reverse transfer capacitance
Crss
450
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
32
ns
Rise time
tr
270
ns
Turn-off delay time
td (off)
570
ns
Fall time
tf
360
ns
VGS = –10 V
ID = –30 A
RL = 1
Body to drain diode forward voltage
VDF
–1.1
V
IF = –60 A, VGS = 0
Body to drain diode reverse recovery time
trr
115
ns
IF = –60 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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