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參數資料
| 型號： | 2SJ506L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道MOS FET的高速電源開關 |
| 文件頁數： | 5/10頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SJ506L |
2SJ506(L), 2SJ506(S)
5
–2
–1.6
–1.2
–0.8
–0.4
0
–4
–8
–12
–16
–20
200
160
120
80
40
–40
0
40
80
120
160
0
–2,–5 A
Pulse Test
Pulse Test
I = –10 A
V = –10 V
–10 A
V = –4 V
–2 A
100
10
0.5
–0.1
2
1
5
20
I = –10 A
–2 A
–5 A
50
–50
–0.2 –0.5 –1 –2
–5 –10 –20
25
°
C
75
°
C
V = –10 V
Pulse Test
Tc = –25
°
C
–1
–2
–5
–10
–20
–50 –100
1000
500
50
20
10
200
100
Pulse Test
–10 V
V = –4 V
–5 A
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Gate to Source Voltage V (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Temperature
Case Temperature Tc (
°
C)
R
D
S
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
F
f
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PDF描述 |
|---|---|
| 2SJ506S | Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ518 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ520TP | TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 10A I(D) | TO-251VAR |
| 2SJ520TP-FA | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ520 | Load Switching Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ506L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ506S-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 10A 3-Pin(2+Tab) DPAK(S)-(2) |
| 2SJ506STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ506STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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