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參數(shù)資料
| 型號(hào)： | 2SJ484 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MICROPAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SJ484 |
2SJ484
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)*
1
–4
A
Body to drain diode reverse drain current
I
DR
–2
A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100s, duty cycle ≤ 10 %
2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ484WY(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ484WYTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ484WYTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ485 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ485TP | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-251VAR |
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