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參數(shù)資料
| 型號(hào)： | 2SJ479S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel DV-L MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道的DV -蜇場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SJ479S |
2SJ479(L), 2SJ479(S)
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
—
—
–10
μ
A
V
DS
= –30 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
—
—
±
10
μ
A
V
GS
=
±
16V, V
DS
= 0
I
D
= –1mA, V
DS
= –10V
I
D
= –15A, V
GS
= –10V
Note3
I
D
= –15A, V
GS
= –4V
Note3
I
D
= –15A, V
DS
= –10V
Note3
V
DS
= –10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
–1.0
—
–2.0
V
Static drain to source on state R
DS(on)
resistance
—
25
35
m
m
R
DS(on)
|y
fs
|
Ciss
—
40
60
Forward transfer admittance
12
20
—
S
Input capacitance
—
1700
—
pF
Output capacitance
Coss
—
950
—
pF
Reverse transfer capacitance Crss
—
260
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
20
—
ns
V
GS
= –10V, I
D
= –15A
R
L
= 0.67
Rise time
—
290
—
ns
Turn-off delay time
—
170
—
ns
Fall time
—
130
—
ns
Body to drain diode forward
voltage
—
–1.1
—
V
I
F
= –30A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
3. Pulse test
t
rr
—
70
—
ns
I
= –30A, V
GS
= 0
diF/ dt = 50A/
μ
s
See characteristic curves of 2SJ471
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ479STL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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| 2SJ483 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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