參數(shù)資料
型號: 2SJ463A
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
中文描述: P溝道MOS場效應(yīng)晶體管高速開關(guān)
文件頁數(shù): 1/8頁
文件大小: 63K
代理商: 2SJ463A
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ463A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
DESCRIPTION
The 2SJ463A is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5 V power source.
Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–30
+20
+0.1
V
V
A
A
+0.4
Note
150
150
–55 to +150
mW
°
C
°
C
Note
PW
10
μ
s, Duty Cycle
1 %
Package Drawings (unit: mm)
Equivalent Circuit
2
0
2.1 ±0.1
1.25 ±0.1
0
+
0
0
0
+
0
+
2
1
3
Marking
0
Internal Diode
Source
Drain
Gate
Gate Protect
Diode
Electrode
Connection
1. Source
2. Gate
3. Drain
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
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