參數(shù)資料
型號(hào): 2SJ363
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 37K
代理商: 2SJ363
2SJ363
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
–30
V
Gate to source voltage
±
20
V
Drain current
–2
A
Drain peak current
–4
A
Body to drain diode reverse drain current
–2
A
Channel dissipation
1
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes: 1. PW
100
μ
s, duty cycle
10%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
3. Marking is “PY”.
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
V
I
G
=
±
10
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
5
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –24 V, V
GS
= 0
I
D
= –100
μ
A, V
DS
= –10 V
I
D
= –1 A, V
GS
= –4 V*
1
I
D
= –1 A, V
GS
= –10 V*
1
I
D
= –1 A, V
DS
= –10 V*
1
V
DS
= –10 V, V
GS
= 0,
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
–1
V
GS(off)
R
DS(on)
–1.0
–2.0
V
Static drain to source on state
0.6
0.75
resistance
0.35
0.45
Forward transfer admittance
|y
fs
|
Ciss
1.4
2.0
S
Input capacitance
2.1
pF
Output capacitance
Coss
100
pF
Reverse transfer capacitance
Crss
0.25
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
1.65
μ
s
μ
s
μ
s
μ
s
I
D
= –1 A, V
GS
= –10 V,
R
L
= 30
Rise time
8
Turn-off delay time
25.9
Fall time
14.9
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參數(shù)描述
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2SJ368 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:60V SERIES POWER MOSFET