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參數(shù)資料
| 型號： | 2SJ361 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel MOS FET |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 43K |
| 代理商： | 2SJ361 |
2SJ361
6
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
3000
1000
300
100
–0.1
–0.3
–1
–3
–10
di/dt = 20 A/μs
V = 0, Ta = 25 °C
0
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
500
300
100
30
10
3
1
0.3
0.1
–4
–8
–12
–16
–20
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
–20
–40
–60
–80
0
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
2.0
–100
G
G
Dynamic Input Characteristics
0.4
0.8
1.2
1.6
DS
V
GS
V
–20 V
I = –2 A
V = –10 V
–20 V
V = –10 V
Drain Current I (A)
S
Switching Characteristics
20
10
3
1
0.3
0.1
–0.1
–0.3
–1
–3
–10
tf
r
d(off)
t
d(on)
t
V = –10 V
V = –10 V
PW = 30 μs
duty < 1 %
μ
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PDF描述 |
|---|---|
| 2SJ362 | Very High-Speed Switching Applications |
| 2SJ363 | Silicon P-Channel MOS FET |
| 2SJ381 | Ultrahigh-Speed Switching Applications |
| 2SJ382 | Very High-Speed Switching Applications |
| 2SJ384 | Silicon P-Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ362 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ363 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ364 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For analog switch |
| 2SJ365 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:60V SERIES POWER MOSFET |
| 2SJ366 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-252VAR |
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