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參數(shù)資料
| 型號： | 2SJ221 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type: Jumper; Contact Spacing (mm): 2; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Tin; Operating Temperature Range (degrees C): -30 to 85; General Description: Accessory; Short pin |
| 中文描述： | 硅P溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SJ221 |
2SJ221
–10
–8
–20
Gate to Source Voltage V
GS
(V)
D
D
–8
–2
–4
–12
–16
0
–4
–6
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–20 A
–10 A
I
D
= –5 A
Pulse Test
5
3
–100
Drain Current I
D
(A)
S
R
D
)
–0.1
Static Drain to Source on State
Resistance vs. Drain Current
1
0.3
0.1
0.03
0.01
0.005
–0.3
–1
–3
–10
–30
Pulse Test
V
GS
= –4 V
–10 V
1.0
40
160
Case Temperature T
C
(°C)
S
R
D
)
0.8
0.2
0
80
120
0
0.4
0.6
Static Drain to Source on State
Resistance vs. Case Temperature
–40
I
D
= –20 A
–5, –10 A
V
GS
= –4 V
V
GS
= –10 V
–5, –10 A
–20 A
Pulse Test
100
–100
Drain Current I
D
(A)
F
y
Forward Transfer Admittance
vs. Drain Current
–0.1
30
10
3
1
0.3
0.5
–0.3
–1
–3
–10
–30
V
= –10 V
Pulse Test
–25°C
75°C
T
C
= 25°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ221-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 100V 20A 3-Pin(3+Tab) TO-220AB Box 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 100V 20A 3-Pin(3+Tab) TO-220AB Box Bulk 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-220 制造商:Renesas Electronics Corporation 功能描述:MOSFET P TO-220 TUBE 50 |
| 2SJ222 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ222-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ223L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-251VAR |
| 2SJ223S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
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