參數(shù)資料
型號(hào)： 2SJ218
廠商： Hitachi,Ltd.
英文描述： Silicon P Channel MOS FET(P溝道MOSFET)
中文描述： 硅P通道MOS FET的性（P溝道MOSFET的）
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 29K
代理商： 2SJ218
2SJ218
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
V
DS
= –50 V, V
GS
= 0
I
D
= –1 mA, V
DS
= –10 V
I
D
= –20 A, V
GS
= –10 V*
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
–250
μA
V
GS(off)
R
DS(on)
–1.0
—
–2.0
V
Static drain to source on state
resistance
—
0.033
0.042
1
—
0.045
0.06
I
D
= –20 A, V
GS
= –4 V*
I
D
= –20 A, V
DS
= –10 V*
V
= –10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|y
fs
|
Ciss
16
25
—
S
1
Input capacitance
—
3800
—
pF
Output capacitance
Coss
—
2000
—
pF
Reverse transfer capacitance
Crss
—
490
—
pF
Turn-on delay time
t
d(on)
—
30
—
ns
I
D
= –20 A, V
GS
= –10 V,
R
L
= 1.5
Rise time
t
r
t
d(off)
t
f
V
DF
—
235
—
ns
Turn-off delay time
—
670
—
ns
Fall time
—
450
—
ns
Body to drain diode forward
voltage
—
–1.35
—
V
I
F
= –45 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
300
—
ns
I
F
= –45 A, V
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SJ217
相關(guān)PDF資料
PDF描述
2SJ219L Silicon P Channel MOS FET(P溝道MOSFET)
2SJ219 Silicon P Channel MOS FET(P溝道MOSFET)
2SJ219S Silicon P Channel MOS FET(P溝道MOSFET)
2SJ220 Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board mounting; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Stack Height (mm): 7.55,7.80; PCB Mount Type: Through-hole; Current Rating(Amps)(Max.): 2; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C): -30 to 85; General Description: Header; Straight; Changed Finish
2SJ220L SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SJ218-E 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM
2SJ219(L) 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA
2SJ219(S) 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
2SJ219L 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:
2SJ219S 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*