參數(shù)資料
型號: 2SD882SL-Q-AB3-B
廠商: 友順科技股份有限公司
英文描述: MEDIUM POWER LOW VOLTAGE TRANSISTOR
中文描述: 中功率低電壓晶體管
文件頁數(shù): 2/4頁
文件大小: 65K
代理商: 2SD882SL-Q-AB3-B
2SD882S
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R208-007,C
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified )
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
RATINGS
40
30
5
3
7
0.6
0.5
1
0.5
+150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
W
W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Pulse
Collector Current
Base Current
SOT-89
SOT-223
TO-92
Power Dissipation
P
D
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
30
100
TYP
200
150
0.3
1.0
80
45
MAX
1000
1000
400
0.5
2.0
UNIT
V
V
V
nA
nA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Note 1: Pulse test: PW<300
μ
s, Duty Cycle<2%
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE2
RANK
RANGE
Q
P
E
100-200
160-320
200-400
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