參數(shù)資料
型號: 2SD875
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency power amplification)
中文描述: 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINIP3-F1, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 38K
代理商: 2SD875
2
Transistor
2SD875
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
C
C
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
–25C
Ta=75C
Collector current I
C
(mA)
C
C
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=–25C
25C
75C
Collector current I
C
(mA)
B
B
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
F
F
–1
–3
–10
–30
–100
0
200
160
120
80
40
V
=10V
Ta=25C
Emitter current I
E
(mA)
T
T
1
3
10
30
100
0
50
40
30
20
10
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
T
C
=25C
DC
t=1s
I
CP
I
C
C
C
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