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參數(shù)資料
| 型號(hào)： | 2SD806 |
| 英文描述： | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C) |
| 中文描述： | 晶體管|晶體管電源模塊|達(dá)林頓|?650V五（巴西）總裁| 50A條一（c） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SD806 |
1
Transistor
2SC2404
Silicon NPN epitaxial planer type
For high-frequency amplification
I
Features
G
Optimum for RF amplification of FM/AM radios.
G
High transition frequency f
T
.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure
Symbol
V
CBO
V
EBO
h
FE*
V
BE
f
T
C
re
PG
NF
Conditions
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
min
30
3
40
450
typ
0.72
650
0.8
24
3.3
max
260
1
Unit
V
V
V
MHz
pF
dB
dB
Marking symbol :
U
*
h
FE
Rank classification
Rank
B
C
D
h
FE
40 ~ 110
65 ~ 160
100 ~ 260
Marking Symbol
UB
UC
UD
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