參數(shù)資料
型號: 2SD789
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/6頁
文件大?。?/td> 30K
代理商: 2SD789
2SD789
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
100
V
Collector to emitter voltage
50
V
Emitter to base voltage
6
V
Collector current
1
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
6
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
1
μ
A
μ
A
V
CB
= 80 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1A
I
C
= 1 A, I
B
= 0.1 A
Emitter cutoff current
0.2
DC current transfer ratio
100
800
Collector to emitter saturation
voltage
0.3
V
Gain bandwidth product
f
T
Cob
100
MHz
V
CE
= 2 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1MHz
Collector output capacitance
Note:
1. The 2SD789 is grouped by h
FE
as follows.
B
C
20
pF
D
E
100 to 200
160 to 320
250 to 500
400 to 800
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