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參數(shù)資料
| 型號： | 2SD787 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SD787 |
2SD787, 2SD788
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SD787
2SD788
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
20
20
V
Collector to emitter voltage
16
20
V
Emitter to base voltage
6
6
V
Collector current
2
2
A
Collector power dissipation
0.9
0.9
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–50 to +150
Electrical Characteristics
(Ta = 25°C)
2SD787
2SD788
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
20
—
—
20
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
16
—
—
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
6
—
—
6
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
—
—
2
—
—
2
μ
A
μ
A
V
CB
= 16 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 2 V, I
C
= 0.1 A
I
C
= 1 A, I
B
= 0.1 A
Emitter cutoff current
—
—
0.2
—
—
0.2
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
100
—
800
100
—
800
V
CE(sat)
—
—
0.3
—
—
0.3
V
Gain bandwidth product f
T
—
100
—
—
100
—
MHz
V
CE
= 2 V,
I
C
= 10 mA
V
= 10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
Note:
B
Cob
—
20
—
—
20
—
pF
1. The 2SD787 and 2SD788 are grouped by h
FE
as follows.
C
D
E
100 to 200
160 to 320
250 to 500
400 to 800
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD787B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD787C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD787D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SD787E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92VAR |
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