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參數(shù)資料
| 型號： | 2SD768K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 36K |
| 代理商： | 2SD768K |
2SD768(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C
= 25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
t
on
t
off
—
—
100
μ
A
μ
A
V
CB
= 120 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 3 A*
1
I
C
= 3 A, I
B
= 6 mA*
1
I
C
= 6A, I
B
= 60 mA*
1
I
C
= 3 A, I
B
= 6 mA*
1
I
C
= 6 A, I
B
= 60 mA*
1
I
C
= 3 A, I
B1
= –I
B2
= 6 mA
I
C
= 3 A, I
B1
= –I
B2
= 6 mA
—
—
10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
1.5
V
voltage
—
—
3
V
Base to emitter saturation
—
—
2
V
voltage
—
—
3.5
V
Turn on time
—
1.0
—
μ
s
μ
s
Turn off time
Note:
—
3.0
—
1. Pulse test.
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
30
10
3
1.0
0.3
0.1
C
C
0.03
1
3
30
300
10
100
1,000
Collector to emitter voltage V
CE
(V)
i
C(peak)
I
C(max)
D prtnT
C
5
°
C
PW=1 s
1m
10
μ
s
Area of Safe Operation
Ta = 25
°
C
1 shot pulse
1
μ
s
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