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參數(shù)資料
| 型號： | 2SD668 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 32K |
| 代理商： | 2SD668 |
2SD668, 2SD668A
2
Electrical Characteristics
(Ta = 25°C)
2SD668
2SD668A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
—
180
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
—
160
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 10 μA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
—
—
10
—
—
10
μA
V
CB
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
DC current transfer
ratio
1
60
—
320
60
—
200
h
FE2
V
CE(sat)
30
—
—
30
—
—
V
CE
= 5 V, I
C
= 1 mA
I
C
= 30 mA, I
B
= 3 mA
Collector to emitter
saturation voltage
—
—
2
—
—
2
V
Base to emitter voltage V
BE
Gain bandwidth product f
T
Collector output
capacitance
Note:
1. The 2SD668 and 2SD668A are grouped by h
FE1
as follows.
—
—
1.5
—
—
1.5
V
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 10 mA
V
= 10 V, I
E
= 0,
f = 1 MHz
—
140
—
—
140
—
MHz
Cob
—
3.5
—
—
3.5
—
pF
B
C
D
2SD668
60 to 120
100 to 200
160 to 320
2SD668A
60 to 120
100 to 200
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD668A | Silicon NPN Epitaxial(外延NPN晶體管) |
| 2SD669A | Silicon NPN Epitaxial |
| 2SD669 | Silicon NPN Epitaxial(外延NPN晶體管) |
| 2SD716 | SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION) |
| 2SD717 | Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD668A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 |
| 2SD668AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668AC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 |
| 2SD668C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-126 |
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