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參數(shù)資料
| 型號： | 2SD2530 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type Darlington(For power amplification) |
| 中文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SD2530 |
Power Transistors
2SD2530
Silicon NPN triple diffusion planer type Darlington
1
For power amplification
I
Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
Low collector to emitter saturation voltage V
CE(sat)
:
<
2.5 V
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
100
V
Collector to emitter voltage
100
V
Emitter to base voltage
V
EBO
I
CP
I
C
5
V
Peak collector current
10
A
Collector current
5
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
P
C
15
W
2
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
2
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CB
=
100 V, I
E
=
0
V
CE
=
80 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
4 V, I
C
=
2 A
V
CE
=
4 V, I
C
=
4 A
I
C
=
2 A, I
B
=
2 mA
I
C
=
4 A, I
B
=
16 mA
I
C
=
4 A, I
B
=
16 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
4 A, I
B1
=
16 mA, I
B2
=
16 mA
V
CC
=
50 V
100
μ
A
μ
A
100
Emitter cutoff current
5
mA
Collector to emitter voltage
V
CEO
h
FE1
h
FE2
100
V
Forward current transfer ratio
2 000
15 000
500
Collector to emitter saturation voltage
V
CE(sat)
1.5
V
2.5
V
Base to emitter saturation voltage
V
BE(sat)
2.5
V
Transition frequency
f
T
t
on
t
stg
20
MHz
Turn-on time
0.27
μ
s
μ
s
μ
s
Storage time
2.9
Fall time
t
f
1.0
10.0
±0.2
0.65
±0.1
0.35
±0.1
2.5
±0.2
1
2
3
0.65
±0.1
1.2
±0.1
1.48
±0.2
2.25
±0.2
C 1.0
0.55
±0.1
0.55
±0.1
2.5
±0.2
1.05
±0.1
1
±
4
±
1
±
S
5.0
±0.1
2
±
9
°
1.0
±0.2
1: Base
2: Collector
3: Emitter
MT-4 Package
Internal Connection
B
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2536(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 115V 2A 3-Pin LSTM |
| 2SD2537T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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