參數(shù)資料
型號(hào): 2SD2425AB2
廠商: NEC Corp.
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁| 5A條一(c)|至243VAR
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 125K
代理商: 2SD2425AB2
Data Sheet D16157EJ1V0DS
2
2SD2425
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 50 V, I
E
= 0
10
μ
A
Emitter cutoff current
I
EBO
V
EB
= 6.0 V, I
C
= 0
10
μ
A
DC current gain
h
FE1
V
CE
= 1.0 V, I
C
= 0.1 A
60
180
DC current gain
h
FE2
V
CE
= 1.0 V, I
C
= 2.0 A
100
200
400
DC current gain
h
FE3
V
CE
= 2.0 V, I
C
= 5.0 A
50
150
Collector saturation voltage
V
CE(sat)
I
C
= 2.0 A, I
B
= 0.2 A
90
300
mV
Base saturation voltage
V
BE(sat)
I
C
= 2.0 A, I
B
= 0.2 A
0.9
1.2
V
Turn-on time
t
on
0.6
μ
s
Storage time
t
stg
0.8
μ
s
Fall time
t
f
I
C
= 2.0 A, V
CC
= 10 V
I
B1
=
I
B2
= 0.2 A
R
L
= 5.0
0.08
μ
s
h
FE
CLASSIFICATION
Marking
h
FE2
AB1
AB2
AB3
100 to 200
160 to 320
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25
°
C)
相關(guān)PDF資料
PDF描述
2SD2425AB3 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
2SD2438 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
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2SD2470 Low VCE(sat) Transistor(低VCE(sat)晶體管)
2SD2493 Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴(kuò)散平面達(dá)林頓晶體管)
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