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參數(shù)資料
| 型號(hào)： | 2SD2420 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type Darlington(For power amplification) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SD2420 |
Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
1
For power amplification
I
Features
High forward current transfer ratio h
FE
: 2 000 to 10 000
Dielectric breakdown voltage of the package:
>
5 kV
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
V
EBO
I
CP
60
V
Emitter to base voltage
5
V
Peak collector current
8
A
Collector current
I
C
P
C
4
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
40
W
2.0
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
30 mA, I
B
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
12 mA, I
B2
=
12 mA
V
CC
=
50 V
200
μ
A
μ
A
I
CEO
I
EBO
V
CEO
500
Emitter cutoff current
2
mA
Collector to emitter voltage
60
V
Forward current transfer ratio
h
FE1
h
FE2
*
V
BE
1 000
2 000
10 000
Base to emitter voltage (DC value)
2.5
V
Collector to emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
f
T
2.0
V
4.0
V
Transition frequency
20
MHz
Turn-on time
t
on
t
stg
t
f
0.5
μ
s
μ
s
μ
s
Storage time
4.0
Fall time
1.0
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
1: Base
2: Collector
3: Emitter
TO-220D Package
Internal Connection
B
C
E
Note)*: Rank classification
Rank
P
Q
h
FE2
4 000 to 10 000
2 000 to 5 000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2420AP | 功能描述:TRANS NPN 80VCEO 4A TO-220D RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2425-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,60V,5.0A,MP-2 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 4-Pin(3+Tab) MP-2 T/R |
| 2SD2425-T1-AZ-AB2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2436 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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