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參數(shù)資料
| 型號： | 2SD2403 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管低頻功放和中高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 137K |
| 代理商： | 2SD2403 |
Data Sheet D16156EJ2V0DS
2
2SD2403
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
V = 80 V, I = 0
100
nA
Emitter cutoff current
I
V = 6.0 V, I = 0
100
nA
DC current gain
h
V = 2.0 V, I = 0.1 A
80
DC current gain
h
V = 2.0 V, I = 1.0 A
100
200
400
DC base voltage
V
V = 2.0 V, I = 0.1 A
630
670
730
mV
Collector saturation voltage
V
I = 2.0 A, I = 0.1 A
150
300
mV
Collector saturation voltage
V
I = 3.0 A, I = 0.15 A
210
500
mV
Base saturation voltage
V
I = 2.0 A, I = 0.1 A
0.89
1.2
V
Gain bandwidth product
f
V = 10 V, I =
0.3 A
130
MHz
Output capacitance
C
V = 10 V, I = 0, f = 1 MHz
30
pF
Turn-on time
t
150
ns
Storage time
t
652
ns
Fall time
t
I = 1.0 A, V
I =
I = 0.1 A
R = 5.0
= 10 V
40
ns
h
FE
CLASSIFICATION
Marking
h
GX
GY
GZ
100 to 200
160 to 320
200 to 400
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