- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370092 > 2SD2318V (Rohm CO.,LTD.) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2318V |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 4.5AI（丙）|至252VAR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SD2318V |
2SD2318
Transistors
High-current gain Power Transistor
(60V, 3A)
2SD2318
!
Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. V
CE
(sat) =0.5V at I
C
/ I
B
=2A / 0.5A)
3) Complements the 2SB1639.
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
*
Single pulse Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
60
6
3
4.5
1
15
*
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25C)
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
External dimensions
(Units : mm)
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SD2318
CPT3
UV
TL
2500
Basic ordering unit (pieces)
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
Min.
80
60
6
-
-
-
-
560
Typ.
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.0
1.5
1800
Unit
V
V
V
μ
A
μ
A
V
V
-
Conditions
f
T
Cob
-
-
50
60
-
-
MHz
pF
*
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
80V
V
EB
=
6V
I
C
/I
B
=
2A/0.05A
I
C
/I
B
=
2A/0.05A
V
CE
/I
C
=
4V/0.5A
V
CE
=
5V, I
E
=-
0.2A, f
=
10MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
*
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*
Measured using pulse current.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2323 | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2SD2337 | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2SD2342 | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2SD2381 | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2SD2382 | Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD23210RA | 功能描述:TRANS NPN 20VCEO 5A NS-B1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2329 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD234 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 3A 25W BCE |
| 2SD2342 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3P150V 6A 50W BCE |
| 2SD2343 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。