參數(shù)資料
型號: 2SD2256
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused
中文描述: 硅npn型三重擴散
文件頁數(shù): 6/6頁
文件大?。?/td> 36K
代理商: 2SD2256
2SD2256
6
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相關PDF資料
PDF描述
2SD2263 Silicon NPN Epitaxial
2SD2294 Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
2SD2295 Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
2SD2296 Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
2SD2298 Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
相關代理商/技術參數(shù)
參數(shù)描述
2SD2257 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
2SD2257(CANO,A,Q) 功能描述:TRANS NPN 3A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):3A 電壓 - 集射極擊穿(最大值):100V 不同?Ib,Ic 時的?Vce 飽和值(最大值):1.5V @ 1.5mA,1.5A 電流 - 集電極截止(最大值):10μA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):2000 @ 2A,2V 功率 - 最大值:2W 頻率 - 躍遷:- 工作溫度:150°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1
2SD2257(CANO,Q,M) 功能描述:TRANS NPN 3A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):3A 電壓 - 集射極擊穿(最大值):100V 不同?Ib,Ic 時的?Vce 飽和值(最大值):1.5V @ 1.5mA,1.5A 電流 - 集電極截止(最大值):10μA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):2000 @ 2A,2V 功率 - 最大值:2W 頻率 - 躍遷:- 工作溫度:150°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1
2SD2257(Q) 功能描述:兩極晶體管 - BJT NPN VCEO 100V VCE1.5 Ic 3A High-Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD2257(Q,M) 功能描述:TRANS NPN 3A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態(tài):停產 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):3A 電壓 - 集射極擊穿(最大值):100V 不同?Ib,Ic 時的?Vce 飽和值(最大值):1.5V @ 1.5mA,1.5A 電流 - 集電極截止(最大值):10μA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):2000 @ 2A,2V 功率 - 最大值:2W 頻率 - 躍遷:- 工作溫度:150°C(TJ) 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商器件封裝:TO-220NIS 標準包裝:1