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參數(shù)資料
| 型號： | 2SD2240S |
| 英文描述： | TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 中文描述： | 晶體管|晶體管| npn型| 150伏五（巴西）總裁| 50mA的一（c）| SC - 75等 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 2SD2240S |
2
Power Transistors
2SD2209
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
C
— L
coil
Area of safe operation (ASO)
0
150
125
100
25
75
50
0
25
20
15
10
5
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
6
5
4
3
2
1
I
B
=2mA
T
C
=25C
1mA
0.75mA
0.5mA
0.15mA
0.1mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=250
T
C
=–25C
25C
100C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
100
10
1
0.3
3
30
I
C
/I
B
=250
T
C
=–25C
100C
25C
B
B
0.1
0.3
1
3
10
100
100000
10000
1000
300
3000
30000
V
CE
=3V
T
C
=100C
25C
–25C
Collector current I
C
(A)
F
F
1
3
10
30
100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
1
3
10
30
100
0.1
100
10
1
0.3
3
30
Load inductance L
coil
(mH)
C
C
1
10
100
1000
0.01
0.1
1
10
100
Non repetitive pulse
T
C
=25C
10ms
300ms
t=1ms
I
CP
I
C
Collector to emitter voltage V
CE
(V)
C
C
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