- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370091 > 2SD2217 (NEC Corp.) NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2217 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管（達(dá)林頓接線）低頻功率放大器和低速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | 2SD2217 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This
transistor is ideal for direct driving from the IC out to drivers such as
pulse motor drivers and relay drivers in OA and FA equipment.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
300
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C(DC)
300
mA
Collector current
I
C(pulse)
*
600
mA
Base current
I
B(DC)
30
mA
Total power dissipation
P
T
(Tc = 25
°
C)
25
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2224 | Driver Applications |
| 2SD2247 | Silicon NPN Epitaxial |
| 2SD2251 | Color TV Horizontal Deflection Output Applications |
| 2SD2256 | Silicon NPN Triple Diffused |
| 2SD2263 | Silicon NPN Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2217AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General High-Current Switching Applications |
| 2SD2218Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2218R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
| 2SD2218S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 8A I(C) | TO-220VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。