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參數(shù)資料
| 型號： | 2SD2139 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification) |
| 中文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 2SD2139 |
1
Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
I
Features
G
High foward current transfer ratio h
FE
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
6
6
3
1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
500
typ
50
max
100
100
100
2500
1
Unit
μ
A
μ
A
μ
A
V
V
MHz
*
h
FE
Rank classification
Rank
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD21390PA | 功能描述:TRANS NPN LF 60VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2139O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2139P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2139Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2139TA | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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