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參數(shù)資料
| 型號： | 2SD2057 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type For horizontal deflection output |
| 中文描述： | 7 A, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 60K |
| 代理商： | 2SD2057 |
1
Power Transistors
2SD2057
Silicon NPN triple diffusion planar type
For horizontal deflection output
I
Features
G
Incorporating a built-in damper diode
G
Reduction of a parts count and simplification of a circuit are al-
lowed
G
High breakdown voltage with high reliability
G
High-speed switching
G
Wide area of safe operation (ASO)
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
7
20
5
4
100
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time (L-load)
Fall time (L-load)
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 10V, I
C
= 5A
I
C
= 5A, I
B
= 1.2A
I
C
= 5A, I
B
= 1.2A
V
CE
= 10V, I
C
= 1A, f = 0.5MHz
I
C
= 5A, I
B1
= 1.2A, I
B2
= –1.2A,
L
leak
= 5
μ
H
I
C
= –6A, I
B
= 0
min
7
4.5
typ
2
max
30
300
15
8
1.5
12
0.8
–2.3
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
V
T
C
=25
°
C
Ta=25
°
C
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(b)
15.0
±
0.3
11.0
±
0.2
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
2.0
±
0.2
1.1
±
0.1
φ
3.2
±
0.1
1
±
0
2
±
0
1
±
0
0
2
3
0.6
±
0.2
2.0
±
0.1
S
1
2
3
C
B
E
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|---|---|
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