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參數(shù)資料
| 型號(hào)： | 2SD2046 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial, Darlington |
| 中文描述： | npn型硅外延，達(dá)林頓 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SD2046 |
2SD2046
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
EBO
I
C
ic
(peak)
P
C
Tj
50
V
Emitter to base voltage
7
V
Collector current
1.5
A
Collector peak current
3.0
A
Collector power dissipation
1.0
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
E to C diode forward current
I
D
1.5
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage (Zener breakdown
voltage)
V
(BR)CBO
(V
z
50
60
70
V
I
C
= 0.1 mA, I
E
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)1
—
—
10
μ
A
V
CE
= 40 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 1 A*
1
I
C
= 1 A, I
B
= 1 mA*
1
DC current transfer ratio
2000
—
10000
Collector to emitter saturation
voltage
—
—
1.5
V
V
CE(sat)2
V
BE(sat)1
—
—
2.0
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
C
= 1 A, I
B
= 1 mA*
1
Base to emitter saturation
voltage
—
—
2.0
V
V
BE(sat)2
V
D
—
—
2.5
V
I
C
= 1.5 A, I
B
= 1.5 mA*
1
I
D
= 1.5 A*
1
E to C diode forward voltage
Note:
1. Pulse test
—
—
3.0
V
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