參數(shù)資料
型號: 2SD1947A
元件分類: 功率晶體管
英文描述: 10 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: 2-10R1A, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 146K
代理商: 2SD1947A
2SD1947A
2004-07-26
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
10
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
100
V
hFE (1)
VCE = 1 V, IC = 1 A
500
1500
DC current gain
hFE (2)
VCE = 1 V, IC = 5 A
150
Collector-emitter saturation voltage
VCE (sat)
IC = 5 A, IB = 0.05 A
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = 5 A, IB = 0.05 A
1.2
V
Collector-emitter forward voltage
VECF
IE = 5 A, IB = 0
2.0
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
70
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
160
pF
Turn-on time
ton
0.5
Storage time
tstg
6.0
Switching time
Fall time
tf
IB1 = IB2 = 0.05 A, duty cycle ≤ 1%
1.0
s
Marking
I B1
20 s
VCC = 30 V
Output
6
IB2
IB1
Input
I B2
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D1947A
Part No. (or abbreviation code)
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2SD1949T106Q 功能描述:兩極晶體管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1949T106R 功能描述:兩極晶體管 - BJT NPN 50V 0.5A SOT-323 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2