參數(shù)資料
    型號(hào): 2SD1940E
    英文描述: TRANSISTOR | BJT | NPN | 85V V(BR)CEO | 10A I(C) | TO-220
    中文描述: 晶體管|晶體管|叩| 85V五(巴西)總裁| 10A條一(c)|至220
    文件頁(yè)數(shù): 9/9頁(yè)
    文件大?。?/td> 768K
    代理商: 2SD1940E
    相關(guān)PDF資料
    PDF描述
    2SD1940F Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
    2SD1943 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220
    2SD1946 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
    2SD1979T Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
    2SD1980F5 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    2SD1943 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-220AB 80V 3A 40W BCE
    2SD1947A(F) 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, NPN, Power, D
    2SD1949Q 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
    2SD1949T106 制造商:ROHM Semiconductor 功能描述:
    2SD1949T106Q 功能描述:兩極晶體管 - BJT NPN 50V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2