型號: | 2SD1918F5 |
英文描述: | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252 |
中文描述: | 晶體管|晶體管|叩| 160V五(巴西)總裁| 1.5AI(丙)|至252 |
文件頁數(shù): | 1/9頁 |
文件大小: | 768K |
代理商: | 2SD1918F5 |
相關(guān)PDF資料 |
PDF描述 |
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2SD1918F5N | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
2SD1918F5P | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252 |
2SD1918F5Q | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
2SD1934Q | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 |
2SD1934R | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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2SD1918TL | 制造商:ROHM Semiconductor 功能描述: |
2SD1918TLQ | 功能描述:兩極晶體管 - BJT NPN 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
2SD1921 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FTL50V .5A .4W ECB |
2SD1922 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92MOD 25V .8A .9W ECB |
2SD1933 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-220FP80V 4A 30W BCE |