參數(shù)資料
型號: 2SD1918F5
英文描述: TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252
中文描述: 晶體管|晶體管|叩| 160V五(巴西)總裁| 1.5AI(丙)|至252
文件頁數(shù): 1/9頁
文件大小: 768K
代理商: 2SD1918F5
相關(guān)PDF資料
PDF描述
2SD1918F5N Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SD1918F5P TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-252
2SD1918F5Q Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SD1934Q TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
2SD1934R Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD1918TL 制造商:ROHM Semiconductor 功能描述:
2SD1918TLQ 功能描述:兩極晶體管 - BJT NPN 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD1921 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FTL50V .5A .4W ECB
2SD1922 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92MOD 25V .8A .9W ECB
2SD1933 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-220FP80V 4A 30W BCE