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參數(shù)資料
| 型號(hào)： | 2SD1609 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SD1609 |
2SD1609, 2SD1610
2
Electrical Characteristics
(Ta = 25°C)
2SD1609
2SD1610
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
—
—
200
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
—
—
200
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—
5
—
—
V
I
E
= 10 μA, I
C
= 0
Collector cutoff current
I
CBO
—
—
10
—
—
—
μA
V
CB
= 140 V, I
E
= 0
V
CE
= 160 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
—
—
—
—
—
10
DC current tarnsfer
ratio
h
FE1
*
1
60
—
320
60
—
320
h
FE2
30
—
—
30
—
—
V
CE
= 5 V, I
C
= 1 mA
V
CE
= 5 V, I
C
= 10 mA
I
C
= 30 mA, I
B
= 3 mA
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
—
—
1.5
—
—
1.5
V
V
CE(sat)
—
—
2
—
—
2
V
Gain bandwidth product f
T
Collector output
capacitance
Note:
1. The 2SD1609 and 2SD1610 are grouped by h
FE1
as follows.
—
140
—
—
140
—
MHz
V
CE
= 5 V, I
C
= 10 mA
V
= 10 V, I
E
= 0,
f = 1 MHz
Cob
—
3.8
—
—
3.8
—
pF
B
C
D
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1616A | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SD1616A | NPN SILICON TRANSISTORS |
| 2SD1616 | NPN SILICON TRANSISTORS |
| 2SD1616AU | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 |
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