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參數資料
Data Sheet D16137EJ1V0DS
2
2SD1592
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 400 V, IE = 0
10
A
DC current gain
hFE1*VCE = 2.0 V, IC = 2.0 A
400
3,000
DC current gain
hFE2*VCE = 2.0 V, IC = 3.0 A
100
Collector saturation voltage
VCE(sat)*IC = 2 A, IB = 5 mA
1.0
1.5
V
Base saturation voltage
VBE(sat)*IC = 2 A, IB = 5 mA
1.6
2.0
V
Turn-on time
ton
1.0
s
Storage time
tstg
12
s
Fall time
tf
IC = 3.0 A, IB1 =
IB2 = 30 mA
RL = 50
, VCC 150 V
6
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE
400 to 800
600 to 1,200
1,000 to 3,000
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
To
ta
lP
o
we
rDis
s
ip
a
ti
o
n
P
T
(W
)
Collector to Emitter Voltage VCE (V)
Co
lle
c
to
rCu
rr
e
n
t
IC
(
A
)
Case Temperature TC (
°C)
IC
De
ra
ti
n
g
d
T
(%
)
Collector Current IC (A)
Case Temperature TC (
°C)
DC
Cu
rr
e
n
tGa
in
h
FE
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1592 | 5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SD1592-L | 5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SD1592-M | 5 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 2SD1602 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1601 | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1592-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD1592-AZ-K | 制造商:Renesas Electronics 功能描述:NPN |
| 2SD16 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 6A 80W BEC |
| 2SD1601 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 60V 4A 40W BCE |
| 2SD161 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC |
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