參數(shù)資料
型號(hào): 2SD1274B
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For power amplification)
中文描述: 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220, FULL PACK-3
文件頁數(shù): 1/3頁
文件大小: 56K
代理商: 2SD1274B
1
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
I
Features
G
High collector to base voltage V
CBO
G
High-speed switching
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
150
200
250
150
200
250
80
6
5
40
2
150
–55 to +150
Unit
V
V
V
V
A
W
C
C
2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A
2SD1274B
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
I
CBO
V
CEO(sus)*
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
t
f
Conditions
V
CB
= 150V, I
E
= 0
V
CB
= 200V, I
E
= 0
V
CB
= 250V, I
E
= 0
I
C
= 0.2A, L = 25mH
I
E
= 1mA, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 5A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.8A, V
EB
= –5V
min
80
6
14
typ
40
max
1
1
1
1.5
1.6
1
Unit
mA
V
V
V
V
MHz
μ
s
2SD1274
2SD1274A
2SD1274B
*
V
CEO(sus)
Test circuit
X
L 25mH
15V
1
Y
G
6V
120
60Hz
I
C
(A)
0.2
0.1
80
V
CE
(V)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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