- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369128 > 2SD1101C TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-236VAR PDF資料下載
參數(shù)資料
| 型號： | 2SD1101C |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-236VAR |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 700mA的一（c）|至236VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 12K |
| 代理商： | 2SD1101C |
Absolute Maximum Ratings
(Ta = 25°C)
Item
————————————————————–
Collector to base voltage
————————————————————–
Collector to emitter voltage
————————————————————–
Emitter to base voltage
————————————————————–
Collector current
————————————————————–
Collector peak current
————————————————————–
Collector power dissipation
————————————————————–
Junction temperature
————————————————————–
Storage temperature
Symbol Rating Unit
V
CBO
400
V
V
CEO
300
V
V
EBO
7
V
I
C
6
A
i
C(peak)
10
A
P
C*1
50
W
Tj
150
°C
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at T
C
= 25°C.
Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to base breakdown voltage
V
(BR)CBO
400
———————————————————————————————————————————
Collector to emitter sustain voltage
V
CEO(sus)
300
Symbol
Min
Typ
Max
Unit
Test condition
—
—
V
I
C
= 0.1 mA, I
E
= 0
—
—
V
I
C
= 4 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
———————————————————————————————————————————
Emitter to base breakdown voltage
V
(BR)EBO
7
———————————————————————————————————————————
Collector cutoff current
I
CEO
—
———————————————————————————————————————————
DC current transfer ratio
h
FE
500
———————————————————————————————————————————
Collector to emitter saturation voltage
V
CE(sat)
—
————————————————————————————————
Base to emitter saturation voltage
V
BE(sat)
—
———————————————————————————————————————————
Turn on time
t
on
—
————————————————————————————————
I
B1
= –I
B2
= 40 mA
Turn off time
t
off
—
———————————————————————————————————————————
Note: 1. Pulse Test.
—
—
V
I
E
= 50 mA, I
C
= 0
—
100
μA
V
CE
= 300 V, R
BE
=
∞
—
—
V
CE
= 2 V, I
C
= 4 A
*1
—
1.5
V
I
C
= 4 A, I
B
= 40 mA
*1
—
2.0
V
2.0
—
μs
I
C
= 4 A,
23
—
μs
See characteristics curves of 2SD991
K
.
123
300
typ
150
typ
2
3
1
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
2SD1114
K
Silicon NPN Triple Diffused
High Voltage Switching, Igniter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1113(K) | TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB |
| 2SD1198AQ | TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | SC-71 |
| 2SD1198AR | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SD1198AS | TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 1A I(C) | SC-71 |
| 2SD1198Q | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1105 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1109 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MP-80120V 6A 70W BCE |
| 2SD111 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 10A 100W BEC |
| 2SD1110 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR MP-80130V 7A 80W BCE |
| 2SD1111 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。