參數(shù)資料
型號: 2SD1085
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Triple Diffused(三倍擴散NPN晶體管)
中文描述: 硅npn型三重擴散(三倍擴散npn型晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 30K
代理商: 2SD1085
2SD1085(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
500
V
I
C
= 0.1 mA, I
E
= 0
Collector to emitter sustain
voltage
V
CEO(sus)
300
V
I
= 2 A, PW = 50 μs,
f = 50 Hz, L = 10 mH
Emitter to base breakdown
voltage
V
(BR)EBO
7
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CEO
h
FE
V
CE(sat)
100
μA
V
CE
= 300 V, R
BE
=
V
CE
= 2 V, I
C
= 2 A*
I
C
= 2 A, I
B
= 20 mA*
DC current transfer ratio
500
1
Collector to emitter saturation
voltage
1.5
V
1
Base to emitter saturation
voltage
V
BE(sat)
2.0
V
Turn on time
t
on
t
off
1.0
μs
I
C
= 2 A, I
B1
= –I
B2
= 20 mA
Turn off time
Note:
22
μs
1. Pulse test.
60
40
20
0
50
100
150
C
C
Maximum Collector Dissipation Curve
Case Temperature T
C
(
°
C)
10
0.5
C
C
3
1.0
0.3
0.1
0.03
0.01
0.003
0.001
1.0
2
Collector to Emitter Voltage V
CE
(V)
5
10 20
50
100 200 500
Ta = 25
°
C
i
C
(peak)
I
C
max.
D prtnT
C
5
°
C
P 0m so
Area of Safe Operation
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