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  • 參數(shù)資料
    型號: 2SC5801(NE851M13)
    英文描述: Discrete
    中文描述: 離散
    文件頁數(shù): 1/24頁
    文件大?。?/td> 104K
    代理商: 2SC5801(NE851M13)
    DATA SHEET
    The information in this document is subject to change without notice. Before using this document, please
    confirm that this is the latest version.
    Not all devices/types available in every country. Please check with local NEC representative for
    availability and additional information.
    Document No. P15660EJ1V0DS00 (1st edition)
    Date Published July 2001 NS CP(K)
    Printed in Japan
    2001
    NPN SILICON RF TRANSISTOR
    2SC5800
    NPN SILICON RF TRANSISTOR FOR
    HIGH-FREQUENCY LOW NOISE
    FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
    FEATURES
    Low phase distortion, low voltage operation
    Ideal for OSC applications
    Flat-lead 3-pin thin-type ultra super minimold package
    ORDERING INFORMATION
    Part Number
    Quantity
    Supplying Form
    2SC5800
    50 pcs (Non reel)
    8 mm wide embossed taping
    2SC5800-T1
    3 kpcs/reel
    Pin 3 (collector) face the perforation side of the tape
    Remark
    To order evaluation samples, consult your NEC sales representative.
    Unit sample quantity is 50 pcs.
    ABSOLUTE MAXIMUM RATINGS (T
    A
    = +25
    °
    C)
    Parameter
    Symbol
    Ratings
    Unit
    Collector to Base Voltage
    V
    CBO
    9.0
    V
    Collector to Emitter Voltage
    V
    CEO
    5.5
    V
    Emitter to Base Voltage
    V
    EBO
    1.5
    V
    Collector Current
    I
    C
    100
    mA
    Total Power Dissipation
    P
    tot
    Note
    200
    mW
    Junction Temperature
    T
    j
    150
    °
    C
    Storage Temperature
    T
    stg
    65 to +150
    °
    C
    Note
    Mounted on 1.08 cm
    2
    ×
    1.0 mm (t) glass epoxy PCB
    Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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