參數(shù)資料
型號(hào): 2SC5509-T2
廠商: NEC Corp.
英文描述: NPN SILICON RF TRANSISTOR
中文描述: NPN硅射頻晶體管
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 82K
代理商: 2SC5509-T2
Data Sheet PU10009EJ01V0DS
2
2SC5509
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
R
th j-c
95
°
C/W
Junction to Ambient Resistance
R
th j-a
650
°
C/W
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
600
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
600
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 10 mA
50
70
100
RF Characteristics
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 90 mA, f = 2 GHz
13
15
GHz
Insertion Power Gain
S
21e
2
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
8
11
dB
Noise Figure
NF
V
CE
= 2 , I
C
= 10 mA, f = 2 Hz,
Z
S
= Z
opt
1.2
1.7
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
0.5
0.75
pF
Maximum Available Power Gain
MAG
Note 3
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
14
dB
Maximum Stable Power Gain
MSG
Note 4
V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
15
dB
Gain 1 dB Compression Output Power
P
O (1 dB)
V
CE
= 2 V, I
C
= 70 mA
Note 5
, f = 2 GHz
17
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP
3
V
CE
= 2 V, I
C
= 70 mA
Note 5
, f = 2 GHz
27
dBm
Notes 1.
Pulse measurement: PW
350
μ
s, Duty Cycle
2%
2.
Collector to base capacitance when the emitter grounded
3.
MAG =
4.
MSG =
5.
Collector current when P
O (1 dB)
is output
h
FE
CLASSIFICATION
Rank
FB
Marking
T80
h
FE
Value
50 to 100
(K –
(K
2
– 1) )
S
21
S
12
S
21
S
12
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