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參數(shù)資料
| 型號(hào)： | 2SC5419 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | Silicon NPN triple diffusion planer type(For low-frequency output amplification) |
| 中文描述： | 70 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SC5419 |
1
Transistor
2SC5419
Silicon NPN triple diffusion planer type
For low-frequency output amplification
I
Features
G
High collector to emitter voltage V
CEO
.
G
High transition frequency f
T
.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
Ratings
300
300
7
100
70
1.0
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 120V, I
B
= 0
I
C
= 100
μ
A, I
B
= 0
I
E
= 1
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
300
7
30
typ
50
max
1
220
1.2
10
Unit
μ
A
V
V
V
MHz
pF
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE
Rank classification
Rank
P
Q
R
h
FE
30 ~ 100
60 ~ 150
100 ~ 220
1.2
±
0.1
0.65
0.45
0.1
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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