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參數(shù)資料
| 型號： | 2SC5336 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 中文描述： | npn型外延硅晶體管高頻低失真功率放大器 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 2SC5336 |
PRELIMINARY DATA SHEET
1996
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
High gain
| S
21
|
2
= 12 dB TYP, @f = 1 GHz, V
CE
= 10 V, Ic = 20 mA
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
PACKAGE DIMENSIONS
(in millimeters)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
Note1
1.2
W
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
I
CB0
V
CB
= 10 V, I
E
= 0
1.0
μ
A
Emitter Cutoff Current
I
EB0
V
EB
= 1 V, I
C
= 0
1.0
μ
A
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 20 mA
Note2
50
120
250
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
6.5
GHz
Feed-back Capacitance
C
re
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Note3
0.5
0.8
pF
Insertion Power Gain
| S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
12.0
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
1.1
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
1.8
3.0
dB
Notes 2
. Pulse measurement : PW
≤
350
μ
S, Duty Cycle
≤
2 %
3
. Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
RH
RF
RE
Marking
RH
RF
RE
h
FE
50 to 100
80 to 160
125 to
250
4.5±0.1
1.6±0.2
2
3
1.5±0.1
0.42
±0.06
0.46
±0.06
3.0
1.5
0.42
±0.06
0
C
E
B
E
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
0.25±0.02
Note 1
. 0.7 mm
×
16 cm
2
double sided ceramic substrate (Copper plating)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5336(NE856M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5336-AZ | 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:12dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應商器件封裝:- 標準包裝:1 |
| 2SC5336RE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336RE-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336RF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
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