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參數(shù)資料
| 型號(hào)： | 2SC5295R |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-416 |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-G1, SC-75, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 43K |
| 代理商： | 2SC5295R |
Transistors
2SC5295
Silicon NPN epitaxial planer type
1
For 2 GHz band low-noise amplification
I
Features
High transition frequency f
T
Low collector output capacitance C
ob
SS-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SS-Mini Type Package (3-pin)
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
V
EBO
I
C
P
C
2
V
Collector current
65
mA
Collector power dissipation
125
mW
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
1
±
1.6
±0.1
5
°
1
°
1.0
±0.1
0
±
0
±
0
(0.5)
(
(0.5)
0
±
(
0.15
+0.1
0.2
+0.1
1
2
3
0
±
Marking Symbol: 3S
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
Q
R
S
h
FE
50 to 120
100 to 170
150 to 300
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
1
μ
A
μ
A
Emitter cutoff current
I
EBO
h
FE
f
T
1
Forward current transfer ratio
*
50
300
Transition frequency
7.0
8.5
GHz
Collector output capacitance
C
ob
0.6
1.0
pF
Forward transfer gain
|
S
21e
|
2
GUM
7
9
dB
Power gain
10
dB
Noise figure
NF
2.2
3.0
dB
Note) *: Rank classification
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|---|---|
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