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參數(shù)資料
| 型號(hào)： | 2SC5250 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | npn型三重?cái)U(kuò)散硅平面（三倍擴(kuò)散npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SC5250 |
2SC5250
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
V
CES
V
EBO
I
C
I
C(peak)
P
C
*
Tj
1500
V
Emitter to base voltage
6
V
Collector current
8
A
Collector peak current
16
A
Collector power dissipation
1
50
W
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
Diode current
Note:
I
D
8
A
1. Value at T
C
= 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 400 mA, I
C
= 0
Collector cutoff current
I
CES
h
FE1
h
FE2
V
CE(sat)
—
—
500
μA
V
CE
= 1500 V, R
BE
= 0
V
CE
= 5 V, I
C
= 1 A
V
CE
= 5 V, I
C
= 5 A
I
C
= 5 A, I
B
= 1.25 A
DC current transfer ratio
6
—
25
DC current transfer ratio
4
—
7
Collector to emitter saturation
voltage
—
—
5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 5 A, I
B
= 1.25 A
Forward voltage of damper
diode
V
ECF
—
—
2
V
I
F
= 8 A
Fall time
t
f
—
0.2
0.4
μsec
I
CP
= 5 A, I
= 1 A,
f
H
= 31.5 kHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5251 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5252 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused Planar |
| 2SC5254 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5254O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23 |
| 2SC5254R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 40MA I(C) | SOT-23 |
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