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參數(shù)資料
| 型號(hào)： | 2SC5183-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 中文描述： | npn型外延硅晶體管中的4針mini -模低噪聲微波功放包裝 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大小： | 60K |
| 代理商： | 2SC5183-T1 |
3
2SC5183
CHARACTERISTICS CURVES (T
A
= 25 C)
25
0
20
15
10
5
1.0
2.0
3.0
COLLECTOR TO CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
C
V
CE
- Collector to Emitter Voltage - V
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0
50
200
100
0
50
100
150
40
30
20
10
0.5
1.0
T
A
- Ambient Temperature - °C
V
BE
- Base to Emitter Voltage - V
P
T
I
C
V
CE
= 2 V
90 mW
I
B
= 20 A
40 A
60 A
80 A
100 A
120 A
140 A
160 A
180 A
200 A
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
1
14
16
1
2
5
10
12
10
8
6
I
C
- CollectorCurrent - mA
I
C
- Collector Current - mA
f
T
14
12
10
8
6
4
2
f = 2 GHz
4
f = 2 GHz
20
50
100
2 V
V
CE
= 1 V
2
5
10
20
50
100
2 V
V
CE
= 1 V
|
2
|
2
I
C
- Collector Current - mA
h
F
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
200
100
10
20
50
1
2
5
10
20
50
100
V
CE
= 2 V
V
CE
= 1 V
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。