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參數(shù)資料
| 型號(hào)： | 2SC5058 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused Planar(三倍擴(kuò)散NPN晶體管) |
| 中文描述： | npn型三重?cái)U(kuò)散硅平面（三倍擴(kuò)散npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC5058 |
2SC5058
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(surge)
P
C
*
Tj
1700
V
Collector to emitter voltage
900
V
Emitter to base voltage
6
V
Collector current
12
A
Collector surge current
20
A
Collector power dissipation
1
150
W
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= 10 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
900
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
6
—
—
V
I
E
= 10 mA, I
C
= 0
Collector to emitter cutoff
current
I
CES
—
—
500
μA
V
CE
= 1700 V, R
BE
= 0
DC current transfer ratio
h
FE
V
CE(sat)
—
—
35
V
CE
= 5 V, I
C
= 1 A
I
C
= 10 A, I
B
= 2.5 A
Collector to emitter saturation
voltage
—
—
5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.5
V
I
C
= 10 A, I
B
= 2.5 A
Fall time
t
f
—
—
0.3
μsec
I
CP
= 8 A, I
B1
= 2 A
I
B2
–3 A, f
H
= 31.5 kHz
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