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參數(shù)資料
| 型號(hào)： | 2SC5023 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial(外延NPN晶體管) |
| 中文描述： | npn型硅外延（外延npn型晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | 2SC5023 |
2SC5023
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C (peak)
P
C
P
C
*
Tj
100
V
Collector to emitter voltage
100
V
Emitter to base voltage
5
V
Collector current
0.2
A
Collector peak current
0.5
A
Collector power dissipation
1.25
W
1
8
Junction temperature
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C.
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
100
—
—
V
I
C
= 1 mA, R
BE
=
∞
Collector cutoff current
I
CBO
I
EBO
h
FE
h
FE
V
BE
V
CE (sat)
—
—
1.0
μA
V
CB
= 80 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
Emitter cutoff current
—
—
10
μA
DC current
2SC5023B
60
—
120
transfer ratio
2SC5023C
100
—
200
Base to emitter voltage
—
—
1.0
V
V
CE
= 10 V, I
C
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
Collector to emitter saturation
voltage
—
—
1.0
V
Gain bandwidth product
f
T
Cob
800
1000
—
MHz
V
CE
= 20 V, I
C
= 100 mA
V
CB
= 30 V, I
E
= 0, f = 1 MHz
Collector output capacitance
—
4.5
6.0
pF
See characteristic curves of 2SC4708.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5024 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SC5024B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC5024C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC5025 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:High frequency amplifier |
| 2SC5026 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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