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參數(shù)資料
| 型號(hào)： | 2SC4985 |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 1 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT-3-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | 2SC4985 |
1
Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High collector to base voltage V
CBO
G
High collector to emitter V
CEO
G
Allowing automatic insertion with radial taping
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
900
800
7
2
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 500mA
I
C
= 200mA, I
B
= 40mA
I
C
= 200mA, I
B
= 40mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
I
C
= 200mA, I
B1
= 40mA, I
B2
= –80mA,
V
CC
= 250V
min
800
6
3
typ
80
max
50
50
1.5
1
1
3
1
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5
±
0.2
4.5
±
0.2
90
°
0.8C
0.8C
0.4
±
0.1
0.8C
1
2
3
0.5
±
0.1
0.7
±
0.1
1.0
±
0.1
0.85
±
0.1
0.65
±
0.1
0.7
±
0.1
2
±
0
1
±
0
1
±
1
3
±
0
2.5
±
0.2
2.5
±
0.2
2.05
±
0.2
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