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參數(shù)資料
| 型號： | 2SC4685 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 125K |
| 代理商： | 2SC4685 |
2SC4685
2004-07-26
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4685
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain: hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)
High collector power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
VCES
40
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulse
(Note)
ICP
8
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
―
V
hFE (1)
VCE = 2 V, IC = 0.5 A
800
―
3200
DC current gain
hFE (2)
VCE = 2 V, IC = 4 A
250
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 40 mA
―
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 A
―
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
150
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
45
―
pF
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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