參數(shù)資料
型號: 2SC4416
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/10頁
文件大?。?/td> 56K
代理商: 2SC4416
2SC4416
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
25
V
Collector to emitter voltage
13
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
I
CEO
I
EBO
V
CE(sat)
0.1
μ
A
μ
A
μ
A
V
CB
= 15 V, I
E
= 0
V
CB
= 13 V, R
BE
=
V
EB
= 3 V, I
C
= 0
I
C
= 20 mA, I
B
= 4 mA
10
Emitter cutoff current
0.3
Collector to emitter saturation
voltage
0.3
V
DC current transfer ratio
h
FE
Cob
50
180
V
CE
= 5 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 20 mA
V
CC
= 5 V, I
= 0.8 mA,
f
in
= 900 MHz,
f
OSC
= 930 MHz (–5dBm),
f
out
= 30 MHz
Collector output capacitance
0.85
1.3
pF
Gain bandwidth product
f
T
CG
3.0
3.8
GHz
Conversion gain
15
19
dB
Noise figure
Note:
NF
8
1.2
dB
Marking is “XB–”.
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