參數(shù)資料
型號： 2SC4300
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）)
中文描述： 5 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PF, FM100, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 26K
代理商： 2SC4300
98
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
2S C4300
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4300
900
800
7
5(Pulse10)
2.5
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4300
100
max
100
max
800
min
10to30
0.5
max
1.2
max
6
typ
75
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
1
3
4
5
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
600mA
500mA
400mA
300mA
200mA
700mA
I
B
=100mA
0.03
0.1
0.05
1
5
10
0.5
2
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
2C
–C
V
CE
(sat)
1
2
5
C
(
C
a
s
e
T
e
m
p
)
0.1
1
0.5
5
0.2
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
250V
I
C
:I
B1
:–I
B2
=2:0.3:1 Const.
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
80
60
40
20
3.5
00
50
100
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
100
500
50
1000
1
0.5
0.1
0.05
0.01
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10
50
100
500
1000
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
100
μ
s
1ms
10
μ
s
C
C
(
B
B
(
Without Heatsink
Natural Cooling
0
5
1
2
3
4
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1Cee)
2 se
–(T
0.02
0.1
0.05
1
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
125
2
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
5
max
t
f
(
μ
s)
1
max
I
(A)
0.3
V
(V)
10
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC4301 Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關(guān)晶體管）)
2SC4304 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓和高速開關(guān)晶體管）)
2SC4331 Silicon Power Transistor
2SC4331-Z Silicon Power Transistor
2SC4332 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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參數(shù)描述
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