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參數(shù)資料
| 型號(hào)： | 2SC4263 |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | 2SC4263 |
2SC4203
2002-07-23
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 150 V, I
E
= 0
―
―
10
μA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0
―
―
10
μA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 1 mA, I
B
= 0
150
―
―
V
h
FE (1)
V
CE
= 10 V, I
C
= 50 mA
40
―
240
DC current gain
h
FE (2)
V
CE
= 10 V, I
C
= 200 mA
20
―
―
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 200 mA, I
B
= 20 mA
―
―
2.0
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 200 mA, I
B
= 20 mA
―
―
1.5
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 70 mA
300
400
―
MHz
Collector output capacitance
C
ob
V
CB
= 30 V, f = 1 MHz, I
E
= 0
―
4.0
5.0
pF
Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
C4203
Product No.
Lot No.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC42692 | TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-23VAR |
| 2SC42693 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC42694 | TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-23VAR |
| 2SC42702 | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC42703 | TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-23VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4264 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC4264GCTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC4265 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC4265JC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SC4265JCTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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